| AVS 59th Annual International Symposium and Exhibition | |
| Electronic Materials and Processing | Thursday Sessions |
| Session EM+MI-ThA |
| Session: | Semiconductor Heterostructures II + Heusler Alloys |
| Presenter: | P.B. Rago, University of Connecticut |
| Authors: | P.B. Rago, University of Connecticut J.E. Ayers, University of Connecticut |
| Correspondent: | Click to Email |
We extend the dynamical theory of Bragg x-ray diffraction to include asymmetrical dislocation densities on the two types of active slip systems in zinc blende semiconductor heterostructures with (001) orientation. In such structures the dislocations exist in eight active slip systems of two basic types distinguished by the orientation of their misfit segments, which are oriented along either the [1-10] or [110] direction. Variation of the incident x-ray beam azimuth results in a change in the shape of the diffraction profile if the two types of slip systems exhibit an asymmetry in dislocation densities. Our work allows simulation of the x-ray diffraction profile of an arbitrary zinc blende semiconductor heterostructure, and through comparison to experimentally measured data, the two dislocation densities of an experimentally measured sample can be extracted. In this work we have demonstrated use of the model by applying it to the ZnSe/GaAs (001) and HgCdTe/CdTe (001) material systems.