| AVS 59th Annual International Symposium and Exhibition | |
| Spectroscopic Ellipsometry Focus Topic | Tuesday Sessions |
| Session EL+TF+AS+EM+SS-TuP |
| Session: | Spectroscopic Ellipsometry Poster Session |
| Presenter: | A. Sarkar, University of Nebraska-Lincoln |
| Authors: | A. Sarkar, University of Nebraska-Lincoln N.J. Ianno, University of Nebraska-Lincoln J.R. Brewer, Rare Earth Solar |
| Correspondent: | Click to Email |
Iron pyrite (FeS2) and samarium sesquisulfide (Sm2S3) are transition metal chalcogenides characterized as absorbing semiconductors with bandgaps of 0.95 eV and 1.8 eV respectively. Synthesis of both n-type and p-type samples have been reported in the form of single crystals and thin films for both materials. As a result of these properties they have received considerable interest as photovoltaic absorber materials. We present the characterization of FeS2 and Sm2S3 thin films using spectroscopic ellipsometry. FeS2 thin films were synthesized by sulfurizing DC magnetron sputtered iron films and reactive ion sputtered iron (III) oxide films in H2S / Ar atmosphere. Sm2S3 thin films were synthesized by reactive ion sputtering of Sm in an H2S / Ar atmosphere. This analysis gives the optical properties of chalcogenide films from near-UV (300 nm) to the mid-IR (20 μm). This can then be correlated to the structural and electronic properties as well. The analysis is corroborated with results obtained from Raman spectroscopy, scanning electron microscopy, profilometry, X-ray diffraction (XRD), and Van der Pauw measurements. The ellipsometric results can be used to access different processing methods for synthesizing FeS2 and Sm2S3, to determine the presence of different phases and intermediate products. This work will lay the foundation for employing in situ ellipsometry as a process monitor and quality control tool during manufacture of earth abundant chalcogenide thin films.