AVS 59th Annual International Symposium and Exhibition
    Actinides and Rare Earths Focus Topic Monday Sessions
       Session AC+TF+SS+MI-MoA

Invited Paper AC+TF+SS+MI-MoA1
Rare Earth 4f Hybridization in Gallium Nitride

Monday, October 29, 2012, 2:00 pm, Room 006

Session: Actinides and Rare Earths: Thin Films and Surface Science
Presenter: J.W. McClory, Air Force Institute of Technology
Authors: J.W. McClory, Air Force Institute of Technology
S.R. McHale, Air Force Institute of Technology
L. Wang, University of Nebraska-Lincoln
W.N. Mei, University of Nebraska-Lincoln
J.C. Petrosky, Air Force Institute of Technology
J. Wu, University of Puerto Rico – San Juan
R. Palai, University of Puerto Rico – San Juan
Ya.B. Losovyj, Louisiana State University
P.A. Dowben, University of Nebraska-Lincoln
Correspondent: Click to Email
The location of the Gd, Er and Yb 4f states within the GaN valence band has been explored both experimentally and theoretically. The 4d – 4f photoemission resonances for various rare earth doped GaN thin films (RE = Gd, Er, Yb) provide an accurate depiction of the occupied 4f state placement within the GaN valence band. The resonant photoemission show that the major Er and Gd rare earth 4f weight is at about 5-6 eV below the valence band maximum, similar to the 4f weights in the valence band of many other rare earth doped semiconductors. For Yb, there is very little resonant enhancement of the valence band of Yb doped GaN, consistent with a largely 4f14-d occupancy. The placement of the rare earth 4f levels is in qualitative agreement with theoretical expectations.