| AVS 58th Annual International Symposium and Exhibition | |
| Thin Film Division | Tuesday Sessions |
| Session TF+SE-TuM |
| Session: | Glancing Angle Deposition (GLAD) I |
| Presenter: | Hilal Is, University of Arkansas at Little Rock |
| Authors: | H. Is, University of Arkansas at Little Rock M.F. Cansizoglu, University of Arkansas at Little Rock T. Karabacak, University of Arkansas at Little Rock |
| Correspondent: | Click to Email |
Photoconductivity (PC) in semiconductors can be detected by measuring the change in electrical conductivity when the material is exposed to light. Photosensitive materials with high PC response can be useful especially for photodetector applications. Compared to conventional thin film geometry, semiconducting nanostructures can provide enhanced photoresponse due to their low dark conductivity and superior capability of absorbing light, which leads to an enhanced PC response even to the minimal changes in light intensity. Glancing angle deposition (GLAD) provides a unique capability of producing nanostructured arrays of various materials with controlled shapes, size, and separation. In this study, we fabricated semiconducting indium sulfide nanorod arrays by GLAD on ITO coated glass substrates in various lengths and capped them with a silver film as metal contact to form a proof-of-concept photodetector device. PC response of these devices was measured at different wavelengths with altered light intensities. We show that GLAD nanorods have a superior PC response than conventional thin film, which is believed to be mainly due to their enhanced light trapping and high optical absorption property.