An electrowetting (EW) microfluidic platform designed for control and transport of aqueous and polar species has been fabricated on passive electrodes as well as an active matrix thin film transistor (TFT) array. To drive the EW devices we integrated the micro fluidic platform on a base-plane of transparent TFTs. Specifically, we have used an InGaZnO (IGZO) active layer for the TFT device which has superior performance and offers the benefit of transparent devices for biological and display applications. The TFTs are fabricated with a bottom-gate staggered structure with Cr gate and SiO2 gate dielectrics deposited via plasma enhanced chemical vapor deposition (PECVD). The a-IGZO semiconducting active layers are deposited using rf magnetron sputtering in a reactive Ar-O2 atmosphere. Finally, source and drain electrodes are formed by e-beam evaporating Ti/Au. Finally the device is annealed in an N2ambient for electrical activation. For the EW device integration, Al electrodes are have been deposited various passivation layers. Subsequently a top dielectric and a hydrophobic Fluoropel layer are applied. In this presentation we will review the process flow and will discuss the materials integration issues of EW device and its effect on the TFT performance. We will illustrate the EW characteristics based on standard planar electrowetting on dielectric (EWOD) platforms and compare them to a new concept we have termed the “Laplace Barrier” which includes post arrays and enhances electrowetting characteristics.