AVS 58th Annual International Symposium and Exhibition
    Transparent Conductors and Printable Electronics Focus Topic Thursday Sessions
       Session TC+EM+NS-ThA

Paper TC+EM+NS-ThA11
β-alumina (SBA): A Promising High Dielectric Constant Gate Material for Solution Processed, Transparent and Low Voltage Transistor Devices

Thursday, November 3, 2011, 5:20 pm, Room 106

Session: Transparent / Printable Electronics Part 2
Presenter: Bo Zhang, Johns Hopkins University
Authors: B. Zhang, Johns Hopkins University
Y. Liu, Johns Hopkins University
H. Katz, Johns Hopkins University
Correspondent: Click to Email
β-alumina (SBA) has been discovered as a promising high dielectric constant gate material for solution processed, transparent and low voltage transistor devices. Some experimental evidence indicates that the mobile Na ion within two spinel blocks made by Al and O is responsible for the high dielectric constant. Transistors (W/L ratio 10) using SBA as gate layer and zinc tin oxide (ZTO) as active layer only need 2V to obtain 0.7mA output current. SBA material is compatible with organic semiconductors such as PQT12 and pentacene as well. Some key issues regarding using SBA for real applications, such as device stability in the ambient atmosphere, response under high frequency, and threshold voltage shift under gate bias have also been studied. It is found that encapsulating the device with CYTOP fluorinated polymer is an effective way to increase the operational stability of the devices in the ambient environment.