AVS 58th Annual International Symposium and Exhibition
    Surface Science Division Tuesday Sessions
       Session SS-TuP

Paper SS-TuP3
Edge Termination of Modified Graphene Oxide during Thermal Exfoliation

Tuesday, November 1, 2011, 6:00 pm, Room East Exhibit Hall

Session: Surface Science Poster Session
Presenter: Muge Acik, The University of Texas at Dallas
Authors: M. Acik, The University of Texas at Dallas
Y.J. Chabal, The University of Texas at Dallas
Correspondent: Click to Email
Nanopore formation in carbon materials (e.g. exfoliated nanostacks of graphite) has been widely studied through mechanical exfoliation, intercalation, electrochemical separation, chemical or thermal exfoliation of graphite oxide (GO) via expansion with partial oxygen removal. Amongst all these methods, exfoliation of modified graphene (GO), a solution-processable precursor compound where aromatic and heterocyclic rings with embedded oxygen functionalities exist, by thermal processing still remains elusive for the following reasons: (1) poor control of GO composition (initial oxygen content), (2) poor understanding of the chemical composition, (3) unknown role of oxygen, adjoining oxygen interactions, and edge termination with oxygen. Infrared absorption spectroscopy coupled with in-situ thermal annealing process [1] makes it possible to examine the chemical changes taking place during thermal reduction to identify and understand interacting molecular environment and the edge functionalization. To unravel the complex mechanisms leading the removal of oxygen in GO, we have performed in-situ transmission infrared absorption spectroscopy (IRAS) measurements of graphene/graphite oxide (GO) thin and bulk films upon thermal annealing (60-850°C) in vacuum (10-3-10-4 Torr). Control of the edge geometry of finite-sized modified graphene flakes depends very much on the control of the processing methods. This edge reconstruction further determines electronic, electric, optical and mechanical properties of the exfoliated modified graphene flakes. Therefore, we not only perform studies deriving a thermal reduction mechanism, but also examine the edge reconfiguration with oxygen. We report here the observation of a surprisingly strong IR absorption band that occurs only upon thermal reduction of GO. After annealing at 850°C in vacuum, the strong enhancement of the new IR active absorbance band is observed at ~800 cm-1[2]. The intensity of this band is 10-100 times larger than what is expected for the oxygen content of the reduced GO, namely between 5 and 8 at.%. This band is assigned to a specific oxidation state, involving oxygen located in the basal plane (forming C-O-C bonds) and at atomically straight edges of reduced graphene. The large enhancement in IR absorption is attributed to the direct participation of electrons, induced by the asymmetric C-O-C stretch mode displacement. These findings open new possibilities in the field of nanoelectronics for all sensor and energy storage applications. [1] M. Acik, et al. J. Am. Chem. Soc. (2011), in preparation. [2] M. Acik, et al. Nat. Mater. 9, 840-845 (2010).