| AVS 58th Annual International Symposium and Exhibition | |
| Surface Science Division | Tuesday Sessions |
| Session SS-TuP |
| Session: | Surface Science Poster Session |
| Presenter: | Anmar Shukur, Kogakuin University, Japan |
| Authors: | A. Shukur, Kogakuin University, Japan H. Shukur, Kogakuin University, Japan M. Sato, Kogakuin University, Japan I. Takano, Kogakuin University, Japan |
| Correspondent: | Click to Email |
Copper oxide-based materials have been widely investigated due to their potential application in many technological fields. Cupric oxide (CuO) is a monoclinic n-type semiconductor with a band gap of 1.2-1.5 eV, whereas cuprous oxide (Cu2O) is cubic p-type semiconductor with a band gap of 2.0 eV [1]. Copper oxides have been employed as a heterogeneous catalyst for several environmental processes, e.g. NO selective reduction, CO oxidation and NO2 decomposition and it is a very promising material for the development of photovoltaic devices like solar cells.
Copper oxide thin films were prepared by reactive magnetron sputtering. Firstly the sputtering chamber was pumped down to 1.2×10-5 Pa. The substrate was a corning glass (#1737) and mirror finishing stainless steel (304ss). The Ar gas was kept at 15sccm and the substrate temperature was kept at 300oC. The amount of oxygen flow rate was varied at 0-10sccm and also the deposition power was varied at 10-40W in order to prepare films with different structures. The structure of the deposited films was measured by X-ray diffraction method (XRD: MAC Science. Co, Ltd). The surface morphology was observed by atomic force microscopy (AFM). The resistivity, mobility and carrier concentration were measured by employing the Hall Effect measurement system. The optical properties of the films were determined by a UV–VIS spectrophotometer (Shimadzu).
In this study, the copper oxide thin films were deposited by a reactive DC magnetron sputtering method. Single Cu2O and CuO phase can be obtained by controlling the sputtering power. The p-type Cu2O thin films were prepared with 30-40W. The n-type CuO was observed at power 10-20W. Low electrical resistivity of 90.18Ωm was obtained for the thin film formed at sputtering power of 30W. The thin film was showed a band gap of 2.5eV attributed to Cu2O at sputtering power 30W whereas the band gap of 10w is 1.9eV. Our experimental investigation indicated that the sputtering power and oxygen flow rate has a significant influence on the electrical properties and optical band gap of the films.