It is known that exposing structured thin films (STF) grown using oblique angle deposition (OAD) to liquids such as DI water or any common solvents permanently deforms the physical structure of the thin films and alters their properties. This is a severe limitation of STFs because the films cannot be patterned into useful devices using conventional wet lithographic processes. In this work, we overcome this challenge and propose to demonstrate conventional i-line lithography technique for patterning STF’s grown using OAD. The ability to selectively fabricate STF in chosen areas of the active devices will be beneficial for numerous applications. It is shown that the structure of these thin films is preserved after lithographic processing. Processing limits in terms of dimensions of the devices or patterns that may possibly be fabricated are discussed.