AVS 58th Annual International Symposium and Exhibition
    Nanometer-scale Science and Technology Division Tuesday Sessions
       Session NS-TuP

Paper NS-TuP9
Fabrication of High-Performance Carbon Nanotube Field-Effect Transistors with Semiconductors as the Source/Drain Contact Material

Tuesday, November 1, 2011, 6:00 pm, Room East Exhibit Hall

Session: Nanometer-scale Science and Technology Division Poster Session
Presenter: Zhigang Xiao, Alabama A&M University
Authors: Z. Xiao, Alabama A&M University
F.E. Camino, Brookhaven National Laboratory
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We report fabrication of high-performance single-walled carbon nanotube field-effect transistors (CNTFETs) using semiconductors as the source/drain contact material and defining submicron-meter gate within the source and drain, without overlapping the source and drain. Common problems in the fabrication of carbon nanotube field effect transistors (CNTFETs) include the positioning of tubes across electrodes and poor device electrical performance due to the presence of metallic nanotubes intermixed with semiconducting ones. To circumvent these problems, dielectrophoresis (DEP) will be used for tube alignment, while semiconducting electrodes such as Sb2Te3 and Bi2Te3-xSex instead of metal electrodes in CNTFETs will be employed to selectively turn off metallic nanotubes resulting in improved device electrical characteristics. The submicron-meter gates within the source and drain in the fabrication of CNTFETs will be fabricated using the ion beam assisted deposition capability of the dual electron/ion beam system. The electrical measurements on the CNTFETs will be performed and the measurement results will be reported.