AVS 58th Annual International Symposium and Exhibition
    Electronic Materials and Processing Division Friday Sessions
       Session EM+SS-FrM

Invited Paper EM+SS-FrM9
2011 AVS Albert Nerken Award Lecture - Electron Spectroscopy of Reconstructed Surfaces: From Silicon to Graphene

Friday, November 4, 2011, 11:00 am, Room 210

Session: Surfaces and Materials for Next Generation Electronics
Presenter: Jack Rowe, North Carolina State University
Correspondent: Click to Email
Surface reconstruction of silicon (and other materials) refers to the process by which atoms at the surface of a crystal assume a different structure than that of the bulk and has been extensively discussed and reported at a number of AVS meeting from the early 1960’s until present time. In the 1970’s a number of electron spectroscopy methods were applied to study this effect and many atomic models were proposed. Early 1970’s experiments using electron energy loss spectroscopy and photoemission spectroscopy are described which along with modern theory methods led to the now accepted dimer model (later confirmed by STM) for the Si(100)2x1 and most other reconstructed (100) semiconductor surfaces. Additional core-level synchrotron spectra are described along with very recent studies which include adsorbate-induced surface reconstruction and the role of interface reconstruction of SiC(0001) used for the growth of graphene and studied by STM and STS. Spectroscopy has continued to play an important role even during the past 25 years after the discovery of atomic--scale imaging by STM of the Si(111)7x7 reconstruction. Both early and more recent studies of reconstruction by the author are reviewed.