| AVS 57th International Symposium & Exhibition | |
| Electronic Materials and Processing | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | EM-TuA1 Invited Paper Influence of N-induced Point Defects on the Electronic Properties of Dilute Nitride GaAsN Alloys Y. Jin, R.M. Jock, H. Cheng, C. Kurdak, R.S. Goldman, University of Michigan |
| 2:40pm | EM-TuA3 Invited Paper Identification of the Dominant Recombination Centers in Dilute Nitrides I.A. Buyanova, M. Chen, Linköping University, Sweden |
| 4:00pm | EM-TuA7 Band Bending and Surface Defects in Ga2O3 T.C. Lovejoy, R. Chen, S.X. Zheng, University of Washington, E.G. Villora, K. Shimamura, H. Yoshikawa, Y. Yamashita, NIMS, Japan, S. Ueda, K. Kobayashi, SPring-8, Japan, S. Dunham, F.S. Ohuchi, M.A. Olmstead, University of Washington |
| 4:40pm | EM-TuA9 Control of Oxygen Diffusion in Titanium Dioxide for Nanoelectronic Applications A. Hollister, P. Gorai, E.G. Seebauer, University of Illinois at Urbana-Champaign |
| 5:00pm | EM-TuA10 Effect of Vacuum Ultraviolet and Ultraviolet Irradiation on Capacitance-Voltage Characteristics of Low-k-porous Organosilicate Dielectrics H. Sinha, J. Lauer, M. Nichols, A. Sehgal, University of Wisconsin-Madison, N.M. Russell, M. Tomoyasu, Tokyo Electron Limited, G.A. Antonelli, Novellus Systems, Inc., Y. Nishi, Stanford University, J.L. Shohet, University of Wisconsin-Madison |
| 5:20pm | EM-TuA11 Effect of Strain Relaxation on Electron Mobility in InAs/GaAs Nanowire Heterowires K.L. Kavanagh, Simon Fraser University, Canada, J. Salfi, I. Saveliev, University of Toronto, Canada, D. Susac, Simon Fraser University, Canada, M. Blumin, H. Ruda, University of Toronto, Canada |