Significant research efforts have been directed in recent years on the growth of Y2O3 films because of their interesting physical, electronic, and optical properties. The diverse range of potential applications of Y2O3 films includes storage capacitors, random access memory (RAM) and metal−insulator−semiconductor (MIS) devices, protective and antireflective coatings for IR detectors, and optical filters. In the present work,Y2O3 films have been produced by the magnetron sputter-deposition. The effect of pressure on the structure, optical and electrical properties ofY2O3 films has been investigated. The rate of deposition found to be significantly influenced by the overall pressure during deposition. Optical characterization carried out using transmittance analysis indicate that the samples at lower deposition rates showed weaker absorption in comparison to the samples with higher deposition rates. X-ray diffraction (XRD) showed that the as-is deposited films at room-temperature exhibit [111] oriented cubic structure. Electrical characterization indicate that films are insulating with a very high resistivity. The capacitance-voltage characteristics are also obtained forY2O3 films. The results will presented and discussed.