AVS 57th International Symposium & Exhibition
    Thin Film Wednesday Sessions
       Session TF-WeA

Paper TF-WeA11
Effects of Deposition Temperature on Al doped ZnO Thin Film for Solar Cells by dc Magnetron Sputtering

Wednesday, October 20, 2010, 5:20 pm, Room Pecos

Session: Thin Films: Growth and Characterization
Presenter: W. Yang, Kunsan National University, Republic of Korea
Authors: W. Yang, Kunsan National University, Republic of Korea
J. Joo, Kunsan National University, Republic of Korea
S.M. Rossnagel, IBM Research
Correspondent: Click to Email
Aluminum-doped zinc oxide films (AZO) were deposited on soda-lime glass substrates by dc magnetron sputtering for solar cell application. The resistivity and average transmittance were improved from 2.3 × 10-3 Ω·cm to 3.3 × 10-4 Ω·cm and from 77.3% to 86% at high deposition temperatures compared to films at room temperature. The mobility and carrier concentration increased, and the crystallinity and grain size also increased at high temperature during deposition. By post deposition annealing at 400℃ for very short time duration, the resistivity and transmittance of room temperature films were improved up to 4.8 × 10-4 Ω· cm and 90.5%. But we found the improved properties have no relation with the structural properties: crystallinity and grain size evaluated by XRD and SEM. The surface roughness of AZO films at high deposition temperature increased to 14 nm by larger grain size, but that by post deposition annealing needs an etching process due to no change of roughness.