| AVS 57th International Symposium & Exhibition | |
| Thin Film | Tuesday Sessions |
| Session TF-TuP |
| Session: | Thin Film Poster Session I |
| Presenter: | J.G. Quiñones Galván, CINVESTAV-IPN, Mexico |
| Authors: | J.G. Quiñones Galván, CINVESTAV-IPN, Mexico F. de Moure Flores, CINVESTAV-IPN, Mexico A. Hernández Hernández, CINVESTAV-IPN, Mexico S. Cerón Gutiérrez, CINVESTAV-IPN, Mexico K. Nieto Zepeda, CINVESTAV-IPN, Mexico M.A. Meléndez Lira, CINVESTAV-IPN, Mexico |
| Correspondent: | Click to Email |
Laser ablation technique allows depositing thin films with the same stoichiometry of the target material. The common use of solid targets is a limitation when there is a need to produce ternary alloys. In order to overcome that limitation we designed a modification of the laser ablation technique to employ powders as target.1
The incorporation of carbon in a SiGe alloy is an alternative for achieving larger band gap and strain compensation. The main problem to control substitutional carbon concentration in SiGeC is the low solubility coefficient of carbon in silicon. Laser ablation technique allows exploring deposition parameters far from the equilibrium that could improve the content of substitutional carbon.
In this work we present the growth and characterization of thin films of Si1-x-yGexCy alloys in the compositions range 0.27 ≤ x ≤ 0.29 and 0.01 ≤ y ≤ 0.03 deposited at different temperatures using the Modified Laser Ablation technique.
The samples where characterized by scanning electron microscopy, atomic force microscopy, X ray diffraction, energy dispersive X-ray spectroscopy, Raman, photoluminescence and photoreflectance spectroscopies. Results indicate the modification of the electronic properties of the alloys depending on the carbon content.
1 M. González-Alcudia, A. Márquez-Herrera, M. Zapata-Torres, M. Meléndez-Lira and O. Calzadilla-Amaya, Adv. in Tech. of Mat. And Mat. Proc. J. 9, 81 (2007).