AVS 57th International Symposium & Exhibition
    Thin Film Tuesday Sessions
       Session TF-TuP

Paper TF-TuP4
Comprehensive Comparison of Electrical and Reliability Characteristics for Various Copper Barrier Films

Tuesday, October 19, 2010, 6:00 pm, Room Southwest Exhibit Hall

Session: Thin Film Poster Session I
Presenter: C.-T. Jung, NCNU, Taiwan, Republic of China
Authors: Y.J. Cheng, NCNU, Taiwan, Republic of China
C.-T. Jung, NCNU, Taiwan, Republic of China
J. Wu, NCNU, Taiwan, Republic of China
Correspondent: Click to Email
The physical, electric and reliability characteristics of various Copper (Cu) barrier layers, including SiC, SiCN, SiCO, SiCNO, and SiN, were investigated. The reliability results associated with film characteristics were also reported in this work. The SiN film still shows the better Cu barrier performance, adhesion strength with Cu, and electromigration (EM) reliability, but its dielectric constant is too high. Nitrogen-doped or oxygen-doped silicon carbide barrier films (SiCN or SiCO) can reduce the dielectric constant, but show a traded-off reliability performance. A newly developed SiCNO film with doping nitrogen and oxygen can meet the better reliability (EM/SM) requirements at the same time, and has a comparable physical and electrical performance to the SiN film.