AVS 57th International Symposium & Exhibition
    Thin Film Tuesday Sessions
       Session TF-TuP

Paper TF-TuP21
Fabrication of Cu-DLC Films by Cathodic arc Plasma Deposition

Tuesday, October 19, 2010, 6:00 pm, Room Southwest Exhibit Hall

Session: Thin Film Poster Session I
Presenter: J. Yun, National Chung Hsing University, Taiwan
Authors: J. Yun, National Chung Hsing University, Taiwan
S. Han, National Taichung Institute of Technology, Taiwan
Correspondent: Click to Email
Copper-doped diamond-like carbon (Cu-DLC) films with varying Cu concentrations were deposited on 7050 aluminum alloy substrates using cathodic vacuum arc (CVA) system. Acetylene reactive gases were also activated at a pressure of 20 mTorr to 30 mTorr and a temperature fixed at 180 °C to provide the DLC. Structure, interface, and chemical bonding state of the investigated film were analyzed by transmission electron microscope (TEM), FTIR spectra, and X-ray photoelectron spectroscopy (XPS). The Cu-DLC film deposited exhibited an amorphous structure , while different fracture feature and surface morphologies was observed in these carbon films prepared under various acetylene reactive gases pressure. With increasing acetylene reactive gases pressure, the friction coefficient of the thin films is lower than 0.21 and the residual stress between the DLC thin films and aluminum alloy substrates can be substantially decreased after the effective doping of Cu into the films, which implies that the Cu-DLC films are suitable to be used as a protective coating on aluminum alloys.