| AVS 57th International Symposium & Exhibition | |
| Thin Film | Tuesday Sessions |
| Session TF-TuP |
| Session: | Thin Film Poster Session I |
| Presenter: | C.T. Lee, National Applied Research Laboratories, Taiwan, Republic of China |
| Authors: | C.T. Lee, National Applied Research Laboratories, Taiwan, Republic of China B.H. Liou, National Applied Research Laboratories, Taiwan, Republic of China W.H. Cho, National Applied Research Laboratories, Taiwan, Republic of China C.N. Hsiao, National Applied Research Laboratories, Taiwan, Republic of China K.S. Tang, Minghsin University of Science and Technology, Taiwan, Republic of China C.C. Jaing, Minghsin University of Science and Technology, Taiwan, Republic of China |
| Correspondent: | Click to Email |
The ZnO:Al (AZO) thin film was prepared on si and glass substrates at 200 ℃ by pulsed dc magnetron sputtering deposition. Effects of pulse frequency on the structural, electrical and optical properties of AZO films were investigated by field emission scanning electron microscopy, X-ray diffraction, Hall measurement and spectrometer. The columnar structures are observed by field emission scanning electron microscopy. X-ray diffraction analysis reveals that AZO films were polycrystalline and have preferred orientation along (002). The grain size and resistivity of AZO films were investigated as a function of pulse frequency (5-100 kHz). The maximum grain size and minimum sheet resistivity of AZO film with 20 kHz were 37.5 nm and 650 ohm/sqr, respectively. The average transmittance of AZO thin films was above 80% in the visible range. The presented results illustrate that the optimum properties of AZO films can be obtained at a pulsing frequency in the range of 5-100 kHz.