| AVS 57th International Symposium & Exhibition | |
| Thin Film | Tuesday Sessions |
| Session TF-TuP |
| Session: | Thin Film Poster Session I |
| Presenter: | M. Kawamura, Kitami Institute of Technology, Japan |
| Authors: | M. Kawamura, Kitami Institute of Technology, Japan K. Nishida, Kitami Institute of Technology, Japan R. Kiyono, Kitami Institute of Technology, Japan Y. Abe, Kitami Institute of Technology, Japan K. Sasaki, Kitami Institute of Technology, Japan |
| Correspondent: | Click to Email |
We have attempted improvements of thermal stability of Ag thin films which are candidates of electrodes in various electronic devices. Consequently, we have found that an introduction of very thin (about 3 nm thick) Al oxide surface and interface layers was very effective. For example, we confirmed a high thermal stability up to 600 oC even the Ag layer thickness was reduced to 50 nm in Al/Ag/Al films.
In the present work, we have further reduced the thickness of Ag layer in Al/Ag/Al films to obtain high transparency and investigated possibility to apply them as transparent electrodes. As a result, the Ag layer thickness could be reduced to 10 nm in Al/Ag/Al films, keeping a low electrical resistivity. On the other hand, Ag single layers thinner than 14 nm were discontinuous state having a high electrical resistance. Transmittance above 70% was obtained for the Al/Ag(10nm)/Al films. In addition, the property change of the films was found to be very little even after keeping them in air at 60 oC for 300 hrs, or in pure water at room temperature for 200 hrs. Consequently, it is found that the Al/Ag/Al thin films have good properties as transparent conductive electrodes.