AVS 57th International Symposium & Exhibition
    Thin Film Tuesday Sessions
       Session TF-TuP

Paper TF-TuP18
The Observation of Strain-Induced InN Nanorods Hetero-Epitaxially Grown by MOMBE

Tuesday, October 19, 2010, 6:00 pm, Room Southwest Exhibit Hall

Session: Thin Film Poster Session I
Presenter: S.-Y. Kuo, Chang Gung University, Taiwan
Authors: F.-I. Lai, Yuan-Ze University, Taiwan
W.-T. Lin, Yuan-Ze University, Taiwan
W.-C. Chen, National Applied Research Laboratories, Taiwan
C.N. Hsiao, National Applied Research Laboratories, Taiwan
S.-Y. Kuo, Chang Gung University, Taiwan
H.C. Hsu, National Cheng Kung University, Taiwan
Correspondent: Click to Email
In this study, we discussed the evolution of morphology and crystal structure of wurtzite indium nitride ( InN ) hetero-epitaxially grown on GaN/sapphire(0001) by metal-organic molecular beam epitaxy (MOMBE) system with growth temperature. In order to investigate the influences of growth temperature, the stoichiometry of In/N was identical ~1:1 during the InN growth. The optical and structural properties of InN films samples were characterized by temperature-dependence photoluminescence (PL), field-emission scanning electron microscopy (FE-SEM) and x-ray diffraction (XRD). With increasing growth temperature, the surface morphology of InN varied from 1-dimensional (1D) nanorods to 2-dimensional-films. XRD results reveal that the strain of InN were released while increasing growth temperature. The PL emission peaks of InN nanorods and films were about 0.77 eV and 0.83 eV, respectively. .In addition, it is noteworthy that the interface between GaN and InN nanorods exist massif-like structure as growth at lower temperature. These observation implied that the formation of 1D InN nanorods was ascribed to the strain-induced mechanism and will be discussed in detail.