AVS 57th International Symposium & Exhibition | |
Thin Film | Tuesday Sessions |
Session TF-TuP |
Session: | Thin Film Poster Session I |
Presenter: | S. Narita, Kogakuin University, Japan |
Authors: | S. Narita, Kogakuin University, Japan I. Takano, Kogakuin University, Japan |
Correspondent: | Click to Email |
In this study, Ti-doped DLC films were formed using He+ or Ar+ ion beam assistance in a naphthalene (C10H8) atmosphere. The formation conditions of DLC film were changed with ion-beam accelerating voltage and current density. Ti doping was performed by using the electron-beam deposition method with Ti evaporation rate from 0.0 to 0.2 nm/sec. The mechanical properties of hardness and friction coefficient were determined using the dynamic micro knoop hardness tester and the ball-on-disk tribotester respectively. Atomic concentration and structure of the films were investigated by X-ray photoelectron spectroscopy, X-ray diffraction and Raman spectroscopy.
The suitable mechanical property of DLC films was obtained by the condition with accelerating voltage of 5 kV at current density of 10 μA/cm2. The maximum hardness was 5.37 GPa using Ar+ ion beam, while the minimum friction coefficient was 0.117 using He+ ion beam. It was clear that properties of DLC film was changed by ion species. In the case of Ar+ ion beam, the higher hardness film contained much sp3 state, while the film with lower friction coefficient contained much sp2 state. From the other side the higher hardness film has a large crystal grain size as compared with the film with lower friction coefficient.