AVS 57th International Symposium & Exhibition
    Thin Film Tuesday Sessions
       Session TF-TuP

Paper TF-TuP11
Fabrication and Structural Analysis of W-Ti-O Thin Films

Tuesday, October 19, 2010, 6:00 pm, Room Southwest Exhibit Hall

Session: Thin Film Poster Session I
Presenter: N.R. Kalidindi, University of Texas at El Paso
Authors: N.R. Kalidindi, University of Texas at El Paso
S.K. Gullapalli, University of Texas at El Paso
R.S. Vemuri, University of Texas at El Paso
F.S. Manciu, University of Texas at El Paso
K.B. Karuppanan, University of Texas at El Paso
C.V. Ramana, University of Texas at El Paso
Correspondent: Click to Email
Semiconductor oxide based chemical sensors are widely used for detecting very small amounts of toxic gases. Tungsten (W) oxide thin films have been used for measuring small amounts of H2S gas. The present work was performed on tungsten-titanium mixed oxide (W-Ti-O) thin films for application in H2S sensors. W-Ti-O were deposited by r.f. magnetron sputtering from a W-Ti alloy target with 5 % (wt %) Ti. W-Ti-O films were grown at different substrate temperatures ranging from 30 to 500oC. All the films were grown with argon/oxygen ratio of 1:9. Structural characterization was performed using X-ray diffraction (XRD) and scanning electron microscopy (SEM) measurements. The results indicate that the W-Ti-O films grown up to the substrate temperature of 200oC were amorphous while films grown at 300-500 oC were crystalline. The peak broadening was found to increase with increase in substrate temperature from 300oC to 500oC due to the increase in disorder with the inclusion of Ti. XRD and SEM results confirm significant disordering at the Si-film interface at higher processing temperatures. Based on the results, which will be presented and discussed, the effect of substrate temperature on the microstructure of W-Ti-O films is established.