AVS 57th International Symposium & Exhibition
    Thin Film Tuesday Sessions
       Session TF-TuP

Paper TF-TuP10
Deposition of Ga-doped ZnO Films by Atomic Layer Deposition Using Ozone as the Oxygen Source

Tuesday, October 19, 2010, 6:00 pm, Room Southwest Exhibit Hall

Session: Thin Film Poster Session I
Presenter: H. Yuan, University of Minnesota
Authors: H. Yuan, University of Minnesota
B. Luo, University of Minnesota
S.A. Campbell, University of Minnesota
W.L. Gladfelter, University of Minnesota
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Gallium-doped ZnO (GZO) films were grown on Si and SiO2/Si substrates at 250°C by atomic layer deposition using diethylzinc as zinc precursor and ozone as the oxygen source. Trimethylgallium were used as the dopant precursor, and two approaches to doping were studied. In one a nanolaminate was formed by interspersing a trimethylgallium/ozone cycle in between the diethylzinc/ozone cycles. The overall gallium concentration depended on the number of diethylzinc/ozone cycles. The second approach involved co-injection of both metal precursors in which their relative concentrations were controlled by adjusting the precursor vessel temperature. The influence of the deposition method on the composition, structural, electrical, and optical properties of the GZO thin films as a function of doping metal concentration will be reported. X-ray diffraction patterns showed all the samples were polycrystalline and exhibited (0001) preferential orientation. The carbon content of the films was below the detection limit of Auger electron spectrometry. The lowest resistivity (4.7×10-4 Ω•cm) of the as-deposited films was obtained through use of the co-injection process. The average optical transmission was over 85 % in the range of 400-800 nm and the optical band gap increased with increasing doping in accordance with the Burstein-Moss effect. The effect of rapid thermal annealing will be presented.