AVS 57th International Symposium & Exhibition
    Thin Film Wednesday Sessions
       Session TF+SE-WeM

Paper TF+SE-WeM3
Growth Temperature Controlled Morphology of Ge Nanocolumns

Wednesday, October 20, 2010, 8:40 am, Room San Miquel

Session: Glancing Angle Deposition (GLAD) I
Presenter: C. Khare, Leibniz Institute of Surface Modification (IOM), Germany
Authors: C. Khare, Leibniz Institute of Surface Modification (IOM), Germany
J. Bauer, Leibniz Institute of Surface Modification (IOM), Germany
J.W. Gerlach, Leibniz Institute of Surface Modification (IOM), Germany
B. Fuhrmann, Martin-Luther-University Halle, Germany
T. Höche, Leibniz Institute of Surface Modification (IOM), Germany
B. Rauschenbach, Leibniz Institute of Surface Modification (IOM), Germany
Correspondent: Click to Email
Germanium films with manifold nanostructures are grown by ion beam sputter glancing angle deposition (GLAD). Morphological shape variations were introduced through variation of the substrate temperature (TS) and differently patterned silicon substrates. Pre-patterned substrates served as seeds for growing structures assisting the formation of a periodic nanostructure array. Nanocolumns grown on a bare Si(100) substrate demonstrated an altered morphology that can be controlled by the substrate temperature. At elevated substrate temperature (TS / TM > 0.3), surface diffusion-driven mass transport as a result of increased adatom mobility augmented fibrous-columnar and intra-columnar growth. Further increment of the substrate temperature (TS / TM > 0.45) exhibited column merging and column broadening. Additionally, significant changes in the overall film thickness representing changes in the film porosity were observed. Similar merging and broadening characteristics were also exhibited on SiO2 nanosphere templated substrates. For the films deposited at elevated substrate temperatures, XRD measurements showed the growth of polycrystalline films. TEM analysis confirmed the growth of large crystallites at elevated substrate temperatures. Thus, growth of Ge nanostructures with tailored morphology can be grown by substrate pre-patterning and by utilizing substrate temperature induced effects.