AVS 57th International Symposium & Exhibition
    Thin Film Wednesday Sessions
       Session TF+SE-WeM

Paper TF+SE-WeM10
Stress Behavior of Obliquely Sputtered Ta Films on Glass Substrates

Wednesday, October 20, 2010, 11:00 am, Room San Miquel

Session: Glancing Angle Deposition (GLAD) I
Presenter: S.U. Jen, Academia Sinica, Taiwan, Republic of China
Authors: S.U. Jen, Academia Sinica, Taiwan, Republic of China
P.H. Chiang, Academia Sinica, Taiwan, Republic of China
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Ta films were obliquely deposited on glass substrates by magnetron sputtering method using the parameters: deposition angleaα = 60o; deposition temperature TS = 298, 373, 473, and 573 K; Ar working gas pressure PAR = 2, 7.5, and 15 mTorr; film thickness tf =100 nm. From X-ray diffraction, atomic force microscopy, cross-section transmission electron microscopy, and Auger depth profile analysis, we conclude that: [1] the axis of each columnar grain is inclined at an angle β ≈35o with respect to the film normal; [2] in-plane grain aggregates show some vestiges of the chain-like structure, whose long axis is perpendicular to the plane of incidence (i.e. the transverse or width direction of the sample); [3] oxygen atoms are found inside the film; especially located in the columnar gaps (or micro-voids) between neighboring grains. The stress of each film was measured via Stoney equation. The main results in regard to the stress behavior of this series of Ta films are summarized below: [a] the intrinsic stress Si is always tensile and dominant over the thermal stress ST; [b] the total stress is anisotropic with the longitudinal stress being larger than the transverse stress; [c] as TS increases, Sibecomes less tensile. Result [a] is reasonable because Ta is a high melting point material.1 Especially, in the oblique-deposition case, the formation of gaps becomes more obvious. Hence, much larger tensile stress (than in the normal-deposition case) arises from the attractive interaction of oxygen atoms across the gaps. Result [b] is a consequence of the self shadowing effect, which is already manifested in the conclusion [2] above. Result [c] is due to the fact that as TS is higher, there is a structure transition from zone 1 to zone T, and oxygen atoms are less likely to be incorporated into the film.
1. G. Guisbiers, O. Van Overschelde, M. Wautelet, Acta Materialia 55, 3541(2007).