| AVS 57th International Symposium & Exhibition | |
| Surface Science | Monday Sessions |
| Session SS2-MoA |
| Session: | Stress and Bonding Energetics in Nucleation and Growth |
| Presenter: | J.B. Ballard, Zyvex Labs |
| Authors: | J.B. Ballard, Zyvex Labs J.R. Von Ehr, Zyvex Labs J.N. Randall, Zyvex Labs J. Alexander, Zyvex Labs R. Saini, Zyvex Labs M. Huang, University of Texas at Dallas H.-S. Choi, University of Texas at Dallas K.J. Cho, University of Texas at Dallas J.-F. Veyan, University of Texas at Dallas Y.J. Chabal, University of Texas at Dallas J.W. Lyding, University of Illinois at Urbana-Champaign |
| Correspondent: | Click to Email |
Atomically precise manufacturing on silicon requires a precise understanding both of patterning techniques as well as the chemistry of molecular deposition. Using a UHV Scanning Tunneling Microscope (STM), we show progress towards a constant temperature process for creating epitaxial structures on Si(100) by alternating STM induced hydrogen depassivation and disilane dosing of the atomically flat surfaces. Emphasizing the detailed mechanisms of patterned deposition, large area patterns are studied as well as patterns consisting of small numbers of dangling bonds revealing a minimum size constraint for patterning. Work is being done towards elevated temperature deposition of disilane with the goal of enhancing epitaxial versus amorphous growth. In addition to growth on atomically flat regions three-dimensional structures are studied. Large area IR spectroscopy as well as theoretical modeling of small area deposition support the STM results. A successful understanding of the physics of patterned epitaxy will lead the way toward high precision manufacturing of previously unobtainable structures and devices.