| AVS 57th International Symposium & Exhibition | |
| Surface Science | Wednesday Sessions |
| Session SS1-WeM |
| Session: | Oxide Surface Structure |
| Presenter: | R. Clarke, University of Michigan, Ann Arbor |
| Correspondent: | Click to Email |
Epitaxial heterostructures constitute a large fraction of the materials systems used in current optoelectronics technology. As device dimensions continue to shrink to the nanoscale, atomic interfaces play an increasingly dominant role in their characteristics and performance. Moreover, new classes of devices are envisioned based on novel phenomena emerging from the complex ionic and electronic rearrangements occurring at interfaces. Energy harvesting, catalysis, quantum information processing and smart sensors are but a few of the possible applications. An essential requirement for harnessing these transformative developments is to provide accurate and detailed maps of the structure, chemical composition and strain at epitaxial interfaces prepared by various deposition methods, including molecular beam epitaxy, metallorganic chemical vapor deposition, focused ion beam and pulsed laser deposition. This presentation will describe some of the exciting science that can be done with current and envisioned capabilities in x-ray surface scattering. Examples include the use of direct methods for achieving sub-Ångstrom resolution maps of complex oxide interfaces, quantum-dot tailoring and focused ion beam directed assembly. Such experiments provide a basis for understanding how local structure can give rise to novel properties.
*Supported by DOE Basic Energy Sciences Contract DE-FG02-06ER46273 and the University of Michigan Energy Frontiers Research Center.</P>