AVS 57th International Symposium & Exhibition
    Surface Science Monday Sessions
       Session SS1-MoA

Paper SS1-MoA10
Femtosecond-laser Photoemission of Deposited MoxSy Clusters on Al2O3/NiAl(110)

Monday, October 18, 2010, 5:00 pm, Room Picuris

Session: Nanocluster Reactivity
Presenter: J. Zhou, State University of New York at Stony Brook
Authors: J. Zhou, State University of New York at Stony Brook
N. Camillone III, Brookhaven National Laboratory
M.G. White, State University of New York at Stony Brook
Correspondent: Click to Email

The electronic structures of supported size-selected MoxSy clusters on an ultrathin aluminum oxide film on NiAl(110) are studied by two-photon photoemission spectroscopy. The MoxSy clusters are produced by magnetron sputtering in gas phase and selected by a quadrupole mass filter. The mass-selected clusters are deposited on the ultrathin aluminum oxide film which has wide band gap to minimize the electronic interaction between clusters and NiAl(110) substrate. The formation of the aluminum oxide film on NiAl(110) results in a 0.3 eV decrease in work function and disappearance of the surface state of NiAl(110). With 0.1 ML Mo4S6 deposited on the surface, the photoemission spectrum is similar with that of bare alumina oxide film because of the absence of interaction between isolated clusters on the film. When the cluster coverage increases to 0.2 ML, some features origin from the cluster are observed and reveal that the clusters are semiconductor with a band gap of about 0.6 eV. A variety of other molybdenum sulfide clusters, MoxSy (x/y: 2/6, 3/7, 5/7, 6/8, 7/10), are also investigated and they exhibit different electronic properties with specific molybdenum to sulfide ratio.