AVS 57th International Symposium & Exhibition
    Surface Science Friday Sessions
       Session SS-FrM

Paper SS-FrM4
Oxygen Adatom Formation and Charge Transfer upon O2 Dissociation on Reduced TiO2(110)

Friday, October 22, 2010, 9:20 am, Room Santa Ana

Session: Reactivity of Oxides, Mainly TiO2
Presenter: I. Lyubinetsky, Pacific Northwest National Laboratory
Authors: I. Lyubinetsky, Pacific Northwest National Laboratory
Y. Du, Pacific Northwest National Laboratory
N.A. Deskins, Worcester Polytechnic Institute
Z. Zhang, Baylor University
Z. Dohnalek, Pacific Northwest National Laboratory
M. Dupuis, Pacific Northwest National Laboratory
Correspondent: Click to Email

Combination of the statistical analysis by s canning tunneling microscopy and density functional theory calculations has been used to investigate the initial stages of molecular oxygen dissociation on the reduced TiO2(110) surface at 300 K . Major O2 dissociation channel results in the bridging O vacancy (VO) healing and deposition of a single O adatom (Oa), while minor channel results in formation of Oa pair on regular Ti sites. For latter channel, an intermediate, metastable nearest-neighbor Oa-Oa configuration is observed after O2 dissociation. This initial configuration is destabilized by Coulomb repulsion of charged Oa’s that separate further along the Ti row into energetically more favorable second-nearest neighbor configuration. The potential energy profile calculated for O2 dissociation on Ti rows and following Oa’s separation strongly supports the experimental observations. Our results also suggest that the itinerant electrons associated with the VO‘s are being utilized in the O2 dissociation process at the Ti rows, whereas at least two oxygen vacancies per O2 molecule are required in order for this process to become viable. Overall, the electrons originating from VO’s provide a larger fraction of charge required for O2 dissociation, while a smaller fraction can be attributed to Ti interstitials.

[1] Du, Y.; Dohnalek, Z.; Lyubinetsky, I. J. Phys. Chem. C 2008, 112, 2649.

[2] Du, Y.; Deskins, N. A.; Zhang, Z.; Dohnalek, Z.; Dupuis, M.; Lyubinetsky, I. Phys. Chem. Chem. Phys.

2010, DOI: 10.1039/C000250J.