AVS 57th International Symposium & Exhibition
    Nanometer-scale Science and Technology Tuesday Sessions
       Session NS-TuM

Paper NS-TuM10
Atomic Layer Deposition on Self-Assembled Block Copolymer Films

Tuesday, October 19, 2010, 11:00 am, Room La Cienega

Session: Nanomanufacturing and Nanomachines
Presenter: S.B. Darling, Argonne National Laboratory
Authors: Q. Peng, Argonne National Laboratory
Y.-C. Tseng, Argonne National Laboratory
S.B. Darling, Argonne National Laboratory
J.W. Elam, Argonne National Laboratory
Correspondent: Click to Email
We establish a new method for preparing ordered nanoscale patterns of various materials with tunable domain sizes by applying atomic layer deposition onto block copolymer thin films. The mechanism is based on the selective interaction of the ALD precursors with moieties in one of the polymer blocks. Well aligned, patterned Al2O3 and TiO2 stripes with controllable dimensions were fabricated by applying ALD onto PS-b-PMMA block copolymer templates. Moreover, due to the self-limited cyclic deposition nature of ALD, a seed layer generated from Al2O3 ALD provides a secondary selective chemistry, which in turn enables a far broader suite of materials to be patterned into the PMMA domains. For example, ZnO and W nucleate easily on the PMMA-Al-OH domains formed from one cycle of Al2O3 ALD. By carefully designing block copolymers and selecting ALD parameters, patterned designer materials with controlled size, center-to-center space, and composition could be synthesized onto a broad range of substrates.