| AVS 57th International Symposium & Exhibition | |
| Nanometer-scale Science and Technology | Wednesday Sessions |
| Session NS+EM+EN-WeA |
| Session: | Photonic and Plasmonic Materials and Devices |
| Presenter: | G. Broenstrup, Institute of Photonic Technology, Germany |
| Authors: | G. Broenstrup, Institute of Photonic Technology, Germany C. Leiterer, Institute of Photonic Technology, Germany N. Jahr, Institute of Photonic Technology, Germany B. Hoffmann, Institute of Photonic Technology, Germany F. Talkenberg, Institute of Photonic Technology, Germany S.H. Christiansen, Max Planck Institute for the Science of Light, Germany |
| Correspondent: | Click to Email |
Silicon nanowires (SiNW) show high potential as future building blocks for photonic devices. They show strong resonant enhancement effects resulting in high absorption efficiencies and even higher scattering efficiencies. Since both effects are based on the same underlying physical principles the resonant enhancement of the absorption as well the resonant enhancement of the scattering of light occurs at the same wavelength. These large scattering efficiencies could result in an increased reflectivity of structures based on these SiNWs.
To overcome the increased scattering efficiencies we show an index matching core-shell approach.
The SiNWs are wrapped with a thin oxide layer with a refractive index smaller than the refractive index of silicon. The thickness of the wrapping layer is formed using atomic layer deposition (ALD), which allows to control the thickness of the layer at the Angstrom scale. The microstructure is analyzed using transmission electron microscopy (TEM).
The scattering behavior of these individual SiNWs with an oxide layer are measured using an optical microscope with a coupled spectrometer. The experimental data is analyzed using an extended Mie theory.
It will be shown, that this method can be used to tune the absorption efficiencies and the scattering separately to different wavelengths.