Invited Paper MI-WeA1
A New Twist on Spin Devices

Wednesday, October 20, 2010, 2:00 pm, Room Zuni

The use of a spin polarized current to rotate the magnetization direction of a ferromagnetic has a number of important implications for novel magnetic devices. Spin torque can switch the resistivity of a magnetic tunnel junction, create spin waves over a very wide range of frequencies, and move magnetic domain walls. I will describe some of the recent advances in Spin Torque Magnetic Random Access Memory (STT-RAM), spintronic nano-oscillators and flux shuttle memory. In addition I will describe a very novel logic array based on electrical control of magnetism called a Reconfigurable Array of magnetic Automata which uses the ferroelastic strain on a magnetic nanopillar to rotate the direction of magnetization. I will show how this can be used to perform logic at very low power approaching zeptojoules per switch..