AVS 57th International Symposium & Exhibition
    Graphene Focus Topic Tuesday Sessions
       Session GR+TF-TuM

Paper GR+TF-TuM11
Monolayer Graphene on 150mm Substrate

Tuesday, October 19, 2010, 11:20 am, Room Brazos

Session: Characterization, Properties, and Applications
Presenter: H.J. Chung, Samsung Advanced Institute of Technology, Korea
Authors: H.J. Chung, Samsung Advanced Institute of Technology, Korea
J. Heo, Samsung Advanced Institute of Technology, Korea
H. Yang, Samsung Advanced Institute of Technology, Korea
S.-H. Lee, Samsung Advanced Institute of Technology, Korea
S. Seo, Samsung Advanced Institute of Technology, Korea
Correspondent: Click to Email
Monolayer graphene over a 150 mm substrate was fabricated using Cu-Ni multilayer growth substrates with Inductively Coupled Plasma-Enhanced Chemical Vapor Deposition (ICPCVD) over 700℃. It was confirmed with Raman spectroscopic mapping after metal etching and transfer process. Over 2000 FETs were fabricated on a 150 mm wafer and on-off ratio and Dirac shift were measured for each device and compared to ones from the graphene grown on Ni substrate. In addition, the result from SPM investigation will be presented.