AVS 57th International Symposium & Exhibition
    Graphene Focus Topic Tuesday Sessions
       Session GR+TF-TuM

Paper GR+TF-TuM1
Near-field Scanning Microwave Microscopy of Few-Layer Graphene

Tuesday, October 19, 2010, 8:00 am, Room Brazos

Session: Characterization, Properties, and Applications
Presenter: N.G. Kalugin, New Mexico Tech
Correspondent: Click to Email

Near-field microwave microscopy can be used as an alternative to atomic-force microscopy or Raman microscopy in determination of graphene thickness. We evaluated the values of AC impedance for few layer graphene. The impedance of mono and few-layer graphene at 4GHz was found predominantly active. Near-field microwave microscopy allows simultaneous imaging of location, geometry, thickness, and distribution of electrical properties of graphene without device fabrication. Our results may be useful for design of future graphene-based microwave devices.

Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the

United States Department of Energy's National Nuclear Security Administration under contract DE-AC04 94AL85000.