AVS 57th International Symposium & Exhibition
    Graphene Focus Topic Monday Sessions
       Session GR+SS+TF+EM-MoM

Paper GR+SS+TF+EM-MoM6
Controlling the Growth Rate of Graphene on Silicon Carbide

Monday, October 18, 2010, 10:00 am, Room Brazos

Session: Epitaxial Graphene on SiC
Presenter: D.B. Torrance, Georgia Institute of Technology
Authors: D.B. Torrance, Georgia Institute of Technology
D.L. Miller, Georgia Institute of Technology
M. Phillips, Georgia Institute of Technology
H. Tinkey, Georgia Institute of Technology
E. Green, Georgia Institute of Technology
P.N. First, Georgia Institute of Technology
Correspondent: Click to Email
Controlled thermal decomposition of silicon carbide is so far the most effective method for growing high-quality graphene epitaxially and at the wafer scale. In this work we simultaneously study the graphenization of SiC(0001) and SiC(000-1) as a function of temperature and buffer-gas pressure in a custom-built ultrahigh vacuum (UHV) induction furnace. The buffer gas is modeled as a homogeneous diffusion medium using kinetic theory. In-situ characterization by both Auger electron spectroscopy and low-energy electron diffraction (LEED) was used to determine the pressure- and temperature-dependent growth rate of graphene layers. Sample quality was further assessed ex-situ using a variety of techniques such as Raman spectroscopy and scanning tunneling microscopy.