AVS 57th International Symposium & Exhibition
    Graphene Focus Topic Wednesday Sessions
       Session GR+MS-WeA

Invited Paper GR+MS-WeA3
In situ Growth, Microscopy, and Spectroscopy of Graphene Films

Wednesday, October 20, 2010, 2:40 pm, Room Brazos

Session: Low Dimensional Carbon Device Manufacturing
Presenter: J. Hannon, IBM T.J. Watson Research Center
Correspondent: Click to Email

I will describe in situ low-energy electron microscopy (LEEM) studies of graphene synthesis on SiC and polycrystalline Ni substrates. Using spatially-resolved electron diffraction (LEED-IV), we have determined the atomic structure, layer thickness, and stacking sequence of individual graphene domains with sub-micron precision. Using spatially-resolved electron energy loss spectroscopy (EELS), we have correlated the local electronic and atomic structure. I will discuss how these measurements aid in interpreting transport measurements from these same samples. This work was performed in collaboration with Ruud Tromp.