AVS 57th International Symposium & Exhibition
    Graphene Focus Topic Wednesday Sessions
       Session GR+EM+MS+TF+MI-WeM

Invited Paper GR+EM+MS+TF+MI-WeM9
Electron Transport in Dual-Gated Mono- and Bilayer Graphene Devices with High-k Dielectrics

Wednesday, October 20, 2010, 10:40 am, Room Brazos

Session: Graphene and Carbon-based Devices
Presenter: E. Tutuc, The University of Texas at Austin
Authors: E. Tutuc, The University of Texas at Austin
S. Kim, The University of Texas at Austin
B. Fallah, The University of Texas at Austin
K. Lee, The University of Texas at Austin
J. Nah, The University of Texas at Austin
S.K. Banerjee, The University of Texas at Austin
L. Colombo, Texas Instruments, Inc.
Correspondent: Click to Email
A key issue for graphene-based devices is the deposition of thin high-k dielectric layers combined with a minimum electron mobility degradation. Here we examine the carrier transport in mono and bilayer graphene field-effect transistors with top Al2O3 and HfO2 dielectrics. The high-k dielectric films are grown by atomic layer deposition (ALD), and using a 1nm-thick Al interfacial layer in order to create intentional nucleation centers for the ALD. We show that this deposition technique allows the realization of high mobility graphene devices with aggressively scaled top dielectrics. We investigate the carrier mobility dependence on dielectric thickness and temperature in mono-layer graphene field-effect transistors with high-k dielectrics. The electron transport in dual-gated graphene bilayers with Al2O3 top dielectric reveals an interesting band-gap energy dependence on transverse electric field and perpendicular magnetic field in this system.