| AVS 57th International Symposium & Exhibition | |
| Energy Frontiers Topical Conference | Thursday Sessions |
| Session EN-ThP |
| Session: | Energy Frontiers Topical Conference Poster Session |
| Presenter: | E.C. Choi, Sungkyunkwan University, Republic of Korea |
| Authors: | E.C. Choi, Sungkyunkwan University, Republic of Korea J. Chang, Sungkyunkwan University, Republic of Korea D.Y. Jung, Sungkyunkwan University, Republic of Korea B. Hong, Sungkyunkwan University, Republic of Korea |
| Correspondent: | Click to Email |
ZnO is a very useful material as II-VI compound semiconductor with a wide band gap of 3.3 eV and a property of native n-type semiconductors. It has been studied actively due to its excellent optical, electrical and structural properties suitable for many applications such as transparent conductive oxide (TCO), solar cell window layer and surface acoustic wave (SAW) devices. In particular, n-type and undoped ZnO films are used as the window layer of GIGS solar cell (n-ZnO/i-ZnO/CdS/CIGS/Mo/glass).
The surface morphology of CIGS film deposited on Mo/glass substrate by liquefied deposition method using nano-inks is severely uneven and the film has many crevices. Also, the CBD-CdS layer with the thicknesses of about 50 nm does not perfectly cover the surface of the CIGS layer. Consequently, these crevices, which remain before the TCO deposition, lead to the formation of shunt path between TCO and CIGS layers.