The layered semi-metal NbSe2 combines a chemically inert van der Waals surface with a high work function of about 5.8 eV. This motivated an investigation of NbSe2 as Ohmic hole injection contact for CdTe solar cells. Current back contacts made from Cu suffer from interdiffusion issues leading to cell degradation. In the discussed experiments, the interface between NbSe2 and CdTe was investigated using x-ray and ultraviolet photoemission spectroscopy (XPS, UPS). In these experiments CdTe and NbSe2 thin films were grown in-situ in a vacuum chamber attached to the photoemission system. This enabled the investigation of the CdTe/NbSe2 interface without interference by ambient contamination. After growth of a CdTe thin film, the NbSe2 film was prepared in several steps. Photoemission spectroscopic characterization between each of the deposition steps allowed the observation of the formation of the band line-up at the interface. The results of the experiments indicate that an intermixed layer forms at the interface. This layer causes the formation of an interface dipole, preventing the formation of an Ohmic contact. A Schottky-type band line-up formed instead.