| AVS 57th International Symposium & Exhibition | |
| Energy Frontiers Topical Conference | Tuesday Sessions |
| Session EN+EM-TuA |
| Session: | Electronic Materials for Energy Conversion & Storage |
| Presenter: | H.V. Nampoori, University of Alabama |
| Authors: | H.V. Nampoori, University of Alabama S. Kotru, University of Alabama |
| Correspondent: | Click to Email |
Thin films of lanthanum doped lead zirconate titatante (PLZT) have gained attention due to the large photostrictive response, and their possible use for contact less actuators and sensors. Variation in composition and doping are known to influence the photostrictive responses as well as ferroelectric behavior of these materials. PLZT is also a potential material for photovoltaic devices due to its high electro-optic coefficient and optical transparency.
In this work, thin films of Pb0.95La0.05(Zr0.54Ti0.46)O3 (PLZT) were prepared using Metal-Organic Decomposition technique (MOD). The films are deposited by spin coating. Sputter deposited Pt electrodes serve as top contacts for the films. Thickness of the grown films varied from 70-350 nm and the growth temperature was chosen in the range of 550-700oC. Details of the film growth process including effects of temperature, thickness and annealing, and electrical and optical characterization will be presented. In addition parameters which affect the electrical properties like ferroelectric hysteresis and leakage behavior mechanisms will be discussed. The photo induced effects on the ferroelectric and the leakage properties, giving insight to the photovoltaic properties of ferroelectric thin films would be presented