| AVS 57th International Symposium & Exhibition | |
| Electronic Materials and Processing | Tuesday Sessions |
| Session EM-TuP |
| Session: | Electronic Materials and Processing Poster Session |
| Presenter: | S. Kim, Paichai University, Republic of Korea |
| Authors: | S. Kim, Paichai University, Republic of Korea S. Choi, Paichai University, Republic of Korea C. Yu, Pohang Accelerator Laboratory, Republic of Korea T. Kim, Paichai University, Republic of Korea J.-H. Boo, Sungkyunkwan University, Republic of Korea |
| Correspondent: | Click to Email |
Highly pure 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-PEN) nanofilms were deposited on a very high quality OTS-SAM surface at two different substrate temperatures (70°C and 90°C) via the vacuum thermal evaporation (VTE) method. X-ray reflectivity (XRR) and grazing angle incidence x-ray diffraction (GID) measurements over a wide temperature range (30°C-284°C) revealed that out-of-plane crystallinity of the film (~10 nm) remains intact but in-plane crystallinity starts to become poor from ~100°C, and to become much worser from 260°C. Atomic force microscope images showed that TIPS-PEN films (~55 nm) prepared at the substrate temperature of 90°C or above commonly have a number of huge cracks between enormous crystal domains (up to 3mm) whereas the films didn’t form such morphology below Ts=90°C. These results clearly suggest that an optimum substrate temperature of TIPS-PEN nanofilms on OTS-SAM surface must be somewhere between 70°C and 90°C, and the process temperature must be kept below 90°C in order to form and maintain a highly crystalline film for an organic thin film transistor device since in-plane crystallinity of a semiconductor channel deeply affects the performance of a transistor.