AVS 57th International Symposium & Exhibition
    Electronic Materials and Processing Tuesday Sessions
       Session EM-TuP

Paper EM-TuP5
Photovoltaic Characteristics of Sputtering-Deposited CdTe Thin Film Solar Cell by Hydrogen Doping Treatment

Tuesday, October 19, 2010, 6:00 pm, Room Southwest Exhibit Hall

Session: Electronic Materials and Processing Poster Session
Presenter: C.-H. Lim, Chosun University, Republic of Korea
Authors: C.-H. Lim, Chosun University, Republic of Korea
S.-H. Ryu, Chosun University, Republic of Korea
J.-S. Park, Chosun University, Republic of Korea
N.-H. Kim, Chonnam National University, Republic of Korea
G.-B. Cho, Chosun University, Republic of Korea
W.-S. Lee, Chosun University, Republic of Korea
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CdTe thin film has the near ideal band gap energy of 1.45 eV for the achievement of the theoretical maximum photovoltaic conversion efficiency of 31%. CdTe thin film also has a high optical absorption coefficient of over 99% of the incident sunlight with only about 2 μm of active thickness. However, the highest conversion efficiency of 16.5% was recorded in the CdTe/CdS heterostructured thin film solar cell . Therefore, the investigations would be strongly required to improve the conversion efficiency with the sufficiently absorbed light. In this study, hydrogen doping treatment was performed with the various hydrogen gas levels and doping temperature in the vacuum desiccator at the fixed doping time in order to improve the efficiency of CdTe/CdS heterostructured cell because the hydrogen affects the electrical properties of CdTe through the fast diffusion of the interstitial hydrogen. The effects of hydrogen doping treatment on the electrical and optical properties of CdTe thin film were investigated by UV-Visible spectrophotometer and Hall effect measurement. The role of hydrogen was examined by some analytical methods including photoluminescence (PL) spectra. The improved cell parameters of CdTe/CdS thin film solar cell were successfully obtained at the optimum condition including short-circuit current density (Jsc), open-circuit voltage (Voc), fill factor (FF), and efficiency. Acknowledgement: This work was supported by National Research Foundation of Korea(NRF) grant funded by the Korean Government(MEST) (20 10-0016048).