AVS 57th International Symposium & Exhibition
    Electronic Materials and Processing Tuesday Sessions
       Session EM-TuP

Paper EM-TuP4
Investigation of Crystal Structure and Optical Properties of Cd1-xMnxS Epilayers

Tuesday, October 19, 2010, 6:00 pm, Room Southwest Exhibit Hall

Session: Electronic Materials and Processing Poster Session
Presenter: D.J. Kim, Mokwon University, Republic of Korea
Authors: D.J. Kim, Mokwon University, Republic of Korea
Y.D. Choi, Mokwon University, Republic of Korea
J.W. Lee, Hanbat University, Republic of Korea
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High quality Cd1-xMnxS epilayers were grown with changing source temperature on GaAs (111) substrates by the hot-wall epitaxy method. The crystal structure of the grown Cd1-xMnxS epilayers was confirmed to be the hexagonal structure by X-ray diffraction pattern (XRD) and scanning electron microscopy (SEM) image. To explore binding states and their potential applications, the hexagonal structured Cd1-xMnxS epilayers have been characterized using x-ray photoelectron spectroscopy (XPS). The optical properties of the Cd1-xMnxS epilayers were investigated in a wide photon energy range between 2.0-8.5 eV using spectroscopic ellipsometry (SE) at room temperature. The data obtained by SE were analyzed to find the critical points of the pseudodielectric function spectra, < ε ( E )>=< ε1( E )>+i< ε2( E )>, such as E0, E1A, E1B, E0', F1, and E2 structures. In addition, the second derivative spectra, d2ε(E)/dE2, of the pseudodielectric function of Cd1-xMnxS epilayers were numerically calculated to determine the critical structures. Four structures, such as E0', F1, and two E2 structures, from 6.0 eV to 8.0 eV were observed with changing Mn composition, for the first time, at 300 K by ellipsometric measurements for the Cd1-xMnxS epilayers.