The surface structure and termination of semiconductor thin films are important factors during epitaxial growth and may affect the interfacial properties of devices. The structure and surface bonding configuration of indium nitride layers grown by high pressure chemical vapor deposition (HPCVD) have been studied using high resolution electron energy loss spectroscopy (HREELS) and X-ray diffraction (XRD). HREELS analysis of InN layers suggests that the surface is primarily terminated with NH2 species. This result is consistent with XRD, which shows the co-existence of different surface orientations. The observed termination by NH2 is in contrast to previous HREELS work on HPCVD-grown InN layers, which showed only NH species on the nitrogen-terminated surface.