| AVS 57th International Symposium & Exhibition | |
| Electronic Materials and Processing | Tuesday Sessions |
| Session EM-TuP |
| Session: | Electronic Materials and Processing Poster Session |
| Presenter: | K.D. Kim, Korea Institute of Machinery and Materials, Republic of Korea |
| Authors: | K.D. Kim, Korea Institute of Machinery and Materials, Republic of Korea D.K. Yun, Korea Institute of Machinery and Materials, Republic of Korea H.Y. Jeong, ETRI, Republic of Korea J.H. Lee, Korea Institute of Machinery and Materials, Republic of Korea J.H. Jeong, Korea Institute of Machinery and Materials, Republic of Korea S.Y. Choi, ETRI, Republic of Korea H.H. Park, KANC, Republic of Korea J.H. Choi, Korea Institute of Machinery and Materials, Republic of Korea |
| Correspondent: | Click to Email |
Nanoimprint lithography is a low-cost method of fabricating nanoscale patterns as small as 6 nm. It has been emerged as a key technology for the fabrication of devices with nanoscale patterns, such as polarizer, optical devices, bio devices, and patterned media. The ultraviolet nanoimprint lithography (UV-NIL) process is also a promising alternative to the expensive conventional optical lithographic process for producing non-volatile memory. Resistive random access memory (RRAM), which utilizes the resistance change effect of oxide material, has attracted considerable attention and been widely investigated due to its potential application in memory devices.
In this study, identical patterns and characteristics of sub-100nm TiO2-based resistive switching systems on 4 inch silicon substrates are demonstrated using Step and flash imprint lithography (SFIL). SFIL is a nanoimprint lithography technique, offering the advantages of a high aspect-ratio, reliable nano-patterns and a transparent stamp that can be used to facilitate overlay techniques. The overlay process from the alignment system in IMPRIO 100 was appropriate for the fabrication of nanoscaled crossbar arrays in this work. Crossbar arrays consisting of TiO2 resistive switching material sandwiched between Pt and Al electrodes with a width of 80 nm and a half-pitch of 100 nm are in turn replicated through successive imprinting and etching processes. Use of a direct metal etching process enhances the uniformity of the TiO2/electrodes interface. The electrical property of the crossbar arrays showed the reproducible resistive switching behavior resulting in the application of the nonvolatile resistive memory.