| AVS 57th International Symposium & Exhibition | |
| Electronic Materials and Processing | Tuesday Sessions |
| Session EM-TuP |
| Session: | Electronic Materials and Processing Poster Session |
| Presenter: | W.-C. Chen, National Applied Research Laboratories, Taiwan |
| Authors: | W.-C. Chen, National Applied Research Laboratories, Taiwan S.-Y. Kuo, Chang Gung University, Taiwan F.-I. Lai, Yuan-Ze University, Taiwan H.-Y. Wang, Yuan-Ze University, Taiwan W.-T. Lin, Yuan-Ze University, Taiwan C.N. Hsiao, National Applied Research Laboratories, Taiwan |
| Correspondent: | Click to Email |
Indium nitride films grown at various growth temperatures were prepared on GaN buffer layer using self-designed plasma-assisted metal-organic molecule beam epitaxy. The influence of substrate temperature on film crystal structure, surface morphology, optical and electrical properties is studied using x-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), X-ray diffraction, Hall effect, and photoluminescence (PL) measurements. The results show that all InN films grown on the GaN template have good quality and the full width at half maximum is around 1000 arcsec. At 500oC, the optical measurements on the films revealed a luminescence feature in the vicinity of 0.7 eV. Also, TEM images of the films exhibit better structural properties indicated by a sharper InN/GaN interface. SEM images determine the growth rate of about 14 nm/min. These results indicate that the optoelectronic properties and crystalline quality can be improved significantly by increasing the growth temperature.