AVS 57th International Symposium & Exhibition
    Electronic Materials and Processing Monday Sessions
       Session EM+MI-MoA

Paper EM+MI-MoA8
Effects on the Electronic Band Structure of EuO Films upon Gd Doping

Monday, October 18, 2010, 4:20 pm, Room Dona Ana

Session: Semiconducting and Highly Correlated Oxides
Presenter: J.A. Colón, University of Nebraska - Lincoln
Authors: J.A. Colón, University of Nebraska - Lincoln
J. An, University of Nebraska - Lincoln
K.D. Belashchenko, University of Nebraska - Lincoln
Y.B. Losovyj, Louisiana State University
P. Liu, University of Wyoming
X.J. Wang, University of Wyoming
J. Tang, University of Wyoming
P.A. Dowben, University of Nebraska - Lincoln
Correspondent: Click to Email
High quality films of EuO and Gd doped EuO were successfully grown on Si (100) via pulse laser deposition (PLD). The addition of 4% Gd introduces considerable affects the texture growth direction, although the crystal structure remains intact. This Gd doping also have a strong influence in the electronic structure of these films, in particular the apparent band offsets, making the material appear considerably more n-type in combined photoemission and inverse photoemission studies. There are also concomitant changes to the conductivity properties. To further elucidate the influence of Gd doping on the electronic band structure of the EuO films, heterojunction devices were constructed resulting in diodes with very distinct properties a negative differential current that depends on magnetic field.