| AVS 57th International Symposium & Exhibition | |
| Applied Surface Science | Tuesday Sessions |
| Session AS-TuP |
| Session: | Applied Surface Science Poster Session |
| Presenter: | D.F. Paul, Physical Electronics |
| Authors: | D.F. Paul, Physical Electronics J.S. Hammond, Physical Electronics D.G. Watson, Physical Electronics |
| Correspondent: | Click to Email |
Scanning Auger Microscopy is a powerful compositional analysis technique for surfaces and nanostructures. It is well known that Auger instruments based on full CMA analyzers provide a stable imaging platform and analytical capability that can be successfully applied to a wide range of material systems. Recently a high energy resolution spectroscopy mode that provides enhanced chemical characterization was added to a CMA Auger instrument. This new functionality is integrated with the instrument while maintaining all the existing capabilities and benefits associated with the CMA based Auger instrument.
The usefulness of this new high energy resolution spectroscopy mode will be demonstrated with detailed chemical information from annealed metal silicide ultra thin films on silicon wafers. Low energy ion beam depth profiling facilitates a chemical state evaluation of the silicide/wafer interface induced by the annealing process. Auger mapping and high energy resolution Auger spectroscopy also characterizes the three dimensional nanostructures formed on the surface and at the interfaces of these metal silicide ultra thin films.