| AVS 56th International Symposium & Exhibition | |
| Electronic Materials and Processing | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | EM-ThM2 Defect States in the Wide Gap Semiconducting Oxide Ga2O3 T.C. Lovejoy, S. Zheng, University of Washington, E.G. Villora, K. Shimamura, National Institute for Materials Science, Japan, F.S. Ohuchi, M.A. Olmstead, University of Washington |
| 8:40am | EM-ThM3 Invited Paper Trends in Surface Electronic Properties of Oxide Semiconductors T.D. Veal, P.D.C. King, C.F. McConville, University of Warwick, UK |
| 9:20am | EM-ThM5 STM and XPS studies of ITO (001) Surfaces H. Morales, U. Diebold, Tulane University |
| 9:40am | EM-ThM6 Cyclic In-Situ Deposition and Etching for Growth of High-Quality Zinc Oxide by Metalorganic Chemical Vapor Deposition E.J. Adles, D.E. Aspnes, NC State University |
| 10:40am | EM-ThM9 Formation of Zn Nanoparticles on Single Crystal ZnO Surfaces with Ultraviolet Laser Irradiation E. Kahn, S. Langford, T. Dickinson, Washington State University |
| 11:00am | EM-ThM10 Preparation of N-doped p-type ZnO Film by Metal-Organic Chemical Vapor Deposition W. Chen, Y. Chen, J. Liang, C. Lu, National Dong Hwa University, Taiwan |
| 11:20am | EM-ThM11 Growth of Ga-doped ZnO Thin Film Prepared by MOCVD for TCO Application K. Chou, J. Liang, Y. Chen, C. Yang, National Dong Hwa University, Taiwan |
| 11:40am | EM-ThM12 Preparation of p-type ZnO by Codoping Method using Gallium and Arsenic H. Jen, Y. Chen, M.S. Wong, H. Kuo, National Dong Hwa University, Taiwan |