| AVS 56th International Symposium & Exhibition | |
| Electronic Materials and Processing | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | EM-ThA1 Filling of Few Electron Quantum Dots Imaged and Characterized By Scanning Force Microscopy L.P. Cockins, Y. Miyahara, S.D. Bennett, A.A. Clerk, McGill University, Canada, S. Studenikin, P. Poole, A. Sachrajda, National Research Council, Canada, P. Grutter, McGill University, Canada |
| 2:20pm | EM-ThA2 InAs Lateral Quantum Dot Molecules with Controllable Configurations M.K. Yakes, A.S. Bracker, C.D. Cress, J.G. Tischler, D. Kim, A. Greilich, D. Gammon, A.R. Laracuente, Naval Research Laboratory |
| 2:40pm | EM-ThA3 Invited Paper MBE Growth and Optical Properties of GaN Quantum Structures N. Grandjean, Ecole Polytechnique Fédérale de Lausanne (EPFL), Switzerland |
| 3:40pm | EM-ThA6 Invited Paper Growth and Process Technologies for High Efficiency InGaN-Based Light-Emitting Diodes J.-I. Chyi, H.-C. Lin, National Central University, Taiwan |
| 4:40pm | EM-ThA9 ENABLE-Based Growth of In-Rich InGaN for Photovoltaic and Light-Emitting-Diode Devices T.L. Williamson, M.A. Hoffbauer, Los Alamos National Laboratory, K.M. Yu, L.A. Reichertz, N. Miller, J.W. Ager, W. Walukiewicz, Lawrence Berkeley National Lab |
| 5:00pm | EM-ThA10 Self-annealing Effect in Neutron-Irradiated AlGaN/GaN High Electron Mobility Transistors G. Ko, Korea University, South Korea, F. Ren, S.J. Pearton, University of Florida, J. Kim, H.-Y. Kim, Korea University, South Korea |
| 5:20pm | EM-ThA11 Engineering Epitaxial AlN Thin Films on Wide Bandgap Semiconductors Y.-C. Perng, J. Chang, University of California, Los Angeles |